TOPAS - TransistOr PArameter Scaleable model is a high precision non-linear transistor model for the simulation of any FET-type structure based upon different material systems such as GaAs, InP or even Si. Due to the special kind of equivalent element circuitry small signal circuit elements are optimized without changing the perfect agreement of static simulations compared to measurements. The model features all linear, non-linear, time and frequency dependent as well as noise dependent modelling of FET-transistors like MESFET, JFET, HFET and even MOSFETs especially LDMOS transistors, too. The model can be easily integrated into Agilents ADS circuit and system simulator. Parameter for the respective models can be determined from the accompaning parameter extraction tools or from ordering this as an service.

Contact:
Dr. Rüdiger Follmann (topas@imst.de)